Advanced process control for semiconductor processing

ABSTRACT

A computer comprising a recordable medium on which is stored instructions for at least one model-based, run-to-run controller routine is provided. The computer includes instructions to receive a first dataset regarding a first wafer after a first process, to determine a process parameter for the first process for a second wafer using the first dataset; and to determine a second process parameter for a second process for the first wafer using the first dataset. In an embodiment, the first process is an etch process. In an embodiment, the second process is a planarization process.

CROSS REFERENCE

This application is a Divisional of U.S. patent application Ser. No.11/689,050, filed Mar. 21, 2007, which is hereby incorporated byreference in its entirety.

BACKGROUND

The present disclosure relates generally to semiconductor fabrication,and more particularly, to semiconductor fabrication process control.

As performance requirements and throughput demands increase,semiconductor fabrication process control has become even more crucial.However, as process geometries decrease, such as from 13 μm to 90nanometer, semiconductor manufacturers have struggled to keep processvariations at an acceptable level. As such, the processes may sufferfrom losses in tool productivity, increased operator interaction, yieldloss, and higher rework rates, all possibly leading to higher costs.Automated Process Control (APC), which may consist of models andfeedback systems among other process control techniques, may help toalleviate some of the variations. However sufficient APC methods arelacking, especially for controlling parameters that are affected bymultiple process steps.

The sheet resistance (Rs) of the copper interconnects is one of theparameters that semiconductor manufacturers have had difficulty inmaintaining an acceptable variation. For processes such as those with 90nanometer feature sizes, a copper Rs variation of less than 20% may berequired. In addition to these demanding performance requirements, low-kperformance goals for the process have, in some instances, required theomission of several etch stop layers compounding the difficultiescontrolling the copper interconnect processes. One solution to controlsheet resistance using APC concerns control of only a single processstep, specifically that of deposition of the copper seed layer andteaches controlling the profile of that layer. Another solution tocontrol Rs using APC only concerns control of a CMP process to minimizeRs variation.

Accordingly, it would be desirable to provide process control absent thedisadvantages discussed above.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isemphasized that, in accordance with the standard practice in theindustry, various features are not drawn to scale. In fact, thedimensions of the various features may be arbitrarily increased orreduced for clarity of discussion.

FIG. 1 is block diagram illustrating material and information flow in aportion of a semiconductor process.

FIG. 2 is a block diagram illustrating a method of process control forsemiconductor fabrication.

FIG. 3 a is a block diagram illustrating an embodiment of the method ofprocess control of FIG. 2.

FIG. 3 b is a block diagram illustrating an embodiment of the blockdiagram of FIG. 3 a.

FIG. 3 c is a block diagram illustrating an embodiment of the blockdiagram of FIG. 3 a.

FIG. 3 d is a block diagram illustrating an embodiment of the blockdiagram of FIG. 3 a.

FIG. 4 (split into FIGS. 4 a and 4 b) is a flow chart illustrating anembodiment of the method of FIGS. 3 a, 3 b, 3 c, and 3 d.

DETAILED DESCRIPTION

The present disclosure relates generally to the fabrication ofsemiconductor devices, and more particularly, to process control of thefabrication of semiconductor devices. It is understood, however, thatspecific embodiments are provided as examples to teach the broaderinventive concept, and one of ordinary skill in the art can easily applythe teaching of the present disclosure to other methods or apparatus.Also, it is understood that the methods and apparatus discussed in thepresent disclosure include some conventional structures and/orprocesses. Since these structures and processes are well known in theart, they will only be discussed in a general level of detail.Furthermore, reference numbers are repeated throughout the drawings forsake of convenience and example, and such repetition does not indicateany required combination of features or steps throughout the drawings.

Referring to FIG. 1, a flowchart illustrates a material process flow,illustrated as solid lines, and an information flow, illustrated asdashed lines. The material process flow includes the process steps forfabricating a semiconductor substrate, such as, for example, a wafer. Afirst wafer 102 a and a second wafer 102 b are illustrated, however,multiple wafers are likely to be processed grouped in lots, as such, thereference to a wafer in the singular in the present disclosure does notby necessity limit the disclosure to a single wafer, but may beillustrative of a lot including a plurality of wafers, a plurality oflots, or any such grouping of material. The flowchart furtherillustrates two tools, an etcher 104 and a planarization tool, achemical mechanical polish (CMP) tool 106. In an embodiment, the CMPtool 106 includes 4 heads, each operable to hold a wafer, and 3 platensupon which polishing pads are placed; one head carrying a wafer to eachof the three platens with each platen removing a portion of the targetlayer. In an embodiment, the etcher 104 includes multiple chambers andis operable to perform an etch process such as, etching a trench in adielectric, in each of the chambers. The etcher 104 can receiveinformation from and transfer information to a computer 108. The CMPtool 106 also can receive information from and transfer information tothe computer 108. The data transferred may include, for example,commands, process parameters such as those parameters used in theprocess recipe, measurement data, process data such as the history ofprocesses ran including specific tool or tool sector used and processparameters used, and/or equipment status. The computer 108 includes acontroller operable to monitor and affect the conditions of the materialprocess flow and memory for storing computer instructions consistentwith the steps and methods discussed in greater detail below. Thecomputer 108 is operable to perform actions including manipulatinginformation (including manipulating information using a model),receiving information, storing information, and transferringinformation. In an embodiment, the computer 108 may include multiplecomputers. In an embodiment, the computer 108 may include equipment orcode embedded in a process tool, such as, for example the etcher 104 orthe CMP tool 106. The computer 108 may further include one or multipleuser interfaces. In an embodiment, the computer 108 may be connected toa plurality of additional semiconductor processing tools, such as, forexample, metrology tools, deposition tools, and electroplating tools.

Referring now to FIG. 2, a method of process control 200 for a pluralityof process steps for semiconductor wafer fabrication is illustrated. Theprocess control method 200 includes three APC systems, a first ProcessAPC 202, a second Process APC 204, and a Supervisor APC 206, thatprovide process control for a material process flow 208. In anembodiment, the first Process APC 202, the second Process APC 204,and/or the Supervisor APC 206 are included in a computer, such as thecomputer 108, described above with reference to FIG. 1. The materialprocess flow 208 is illustrative of the process steps for thefabrication of semiconductor wafers and may include tools such as theetcher 104 and the CMP tool 106, described above with reference toFIG. 1. The first Process APC 202 sends information to and receivesinformation from the material process flow 208. The Supervisor APC 206receives information from the material process flow 208 and sendsinformation to the second Process APC 204. The second Process APC 204sends information to and receives information from the material processflow 208. This exchange of information in the process control method 200includes the exchange of feedback data and feed-forward data. Feedbackdata includes, for example, the data transferred on paths denoted byreference numbers 208 a and 208 b; feed-forward data includes, forexample, data transferred on paths denoted by reference numbers 208 cand 208 d. The feed-forward data may be used to set wafer specificprocess parameters and/or process targets for subsequent processing ofthe wafer. For example, feed-forward data includes data, includingmeasurement data, on the wafer 102 a that is used to determinesubsequent process parameters and/or targets for the wafer 102 a. Thefeedback data may be used to determine process parameters and/or processtargets for the processing of subsequent wafers. For example, feedbackdata includes data from the processing of wafer 102 a used to determinethe process parameters for wafer 102 b. In an embodiment, the firstProcess APC 202 and the second Process APC 204 may pass information toand from the material process flow 208 at additional process steps. Inan embodiment, the Supervisor APC 206 may send information to andreceive information from additional process APC systems or process stepsin the material process flow 208.

Referring now to FIGS. 3 a, 3 b, 3 c, and 3 d, a process control method300 is illustrated; the process control method 300 is an embodiment ofthe process control method 200, described above with reference to FIG.2. The material process flow illustrated is a portion of theback-end-of-the-line (BEOL) fabrication of metal interconnects andincludes an etch process 308, a post-etch measurement 310, abarrier/seed metal deposition process 312, a metal plating process 314,a planarization process 316, and a post-planarization measurement 318.Additional processing steps, as known in the art, may be includedbefore, after, and/or among the illustrated steps. In an embodiment, theprocess control method 300 may be utilized for a single damasceneprocess, a dual damascene process, or a variety of other interconnectfabrication methods, as known in the art. The etch process 308 and theplanarization process 316 are controlled in part by three APC systems:an Etch APC 302, a Planarization APC 304, and a Supervisor APC 306,though additional process controls may be present. The Etch APC 302 isan embodiment of the first Process APC 202, as described above withreference to FIG. 2. The Planarization APC 304 is an embodiment of thesecond Process APC 204, also described above with reference to FIG. 2.The Supervisor APC 306 is an embodiment of the Supervisor APC 206, alsodescribed above with reference to FIG. 2.

Referring in particular to FIGS. 3 a and 3 b, the Etch APC 302 of theprocess control method 300 is illustrated in detail. In an embodiment,the wafer just prior the etch process 308 has photoresist deposited on adielectric layer allowing the etch process 308 to etch a feature, suchas a trench, in the dielectric. The Etch APC 302 determines an etchprocess parameter that, when included in a process recipe in the etchprocess 308, will allow the etch process 308 to create a feature withapproximately the target profile. The process parameter may includeparameters such as, for example, trim time of the photoresist, chemicalflowrate, and/or etch time. In an embodiment, the target profile isinput by a user. In an alternative embodiment, the target profile isdelivered to the Etch APC 302 by the Supervisor APC 306. The targetprofile includes the target feature dimensions, such as trench depth andtrench critical dimension (width). The etch process parameter may bedetermined by the Etch APC 302 using a model-based controller. In anembodiment, the etch process parameter is determined by the Etch APC 302using a model-based, run-to-run controller. In an embodiment, thecontroller includes a part-effect model that may take into account thedesign rules for the wafer. The design rules may include the circuitpattern density and specific requirements for performance of the productbeing fabricated. In an embodiment, the controller includes atool-effect model that may take into account process deviationsparticular to the tool. In a further embodiment, the tool-effect modelmay include a chamber specific model for a multiple chamber etch tool.The Etch APC 302 sends the determined etch process parameter to the etchprocess 308, for example, to an etch tool such as the etcher 104, asdescribed above with reference to FIG. 1, to be used in processing thewafer.

The Etch APC 302 periodically updates the models used to determine theetch process parameter for the etch process 308 using feedback data fromthe material process flow including feedback data from the etch process308 and the post-etch measurement 310. The feedback data from the etchprocess 308 may include process data, such as, the etch processparameter and the tool parameters used, including a designation of thetool sector in which the processing occurred such as, for example, adesignation of the chamber performing the etch. The feedback data fromthe post etch process measurement 310 may include measurements of theetched feature and/or other layers present on the wafer. The post-etchmeasurement 310 may include an optical measurement. In an embodiment,the measurement is performed by the etch tool performing the etchprocess 308. In an alternative embodiment, the measurement is done by aseparate tool, such as, for example a spectroscopic critical dimension(SCD) metrology tool. Upon receiving the feedback data, the Etch APC 302determines the difference between the feedback data, which illustratesthe actual process output, and the model-predicted process output. TheEtch APC 302 uses this difference to update the model for use indetermining an etch process parameter for a subsequent wafer. In anembodiment, an exponentially weighed moving average (EWMA) is used tofilter outlier data. The difference in the predicted and actual outputmay be a result of process drift due to, for example, the aging of theetcher chamber, preventive maintenance performed on a tool, and/or avariety of other factors as known in the art. The frequency of the modelupdate may be on a wafer-by-wafer basis, lot-by-lot basis, processrun-to-run basis, and/or any other frequency determined by the user.

Referring in particular to FIGS. 3 a and 3 c, the measurement data fromthe post-etch measurement 310, described above with reference to FIGS. 3a and 3 b, is used as feed-forward data and transmitted to SupervisorAPC 306. The Supervisor APC 306 uses the measurement data to determine awafer specific process target for the planarization process 316. In anembodiment, this process target includes the target thickness of theplanarized metal layer that forms the interconnects. In an embodiment,the Supervisor APC 306 determines the process target using a modelderived from experimental data. In an embodiment, the Supervisor APC 306functions to control at least one specific process parameter affected bymultiple process steps, such as, for example sheet resistance. In afurther embodiment, the Supervisor APC 306 model describes therelationship between the specific process parameter and the dimensionsof the metal interconnect.

Referring in particular to FIGS. 3 a and 3 d, the process control method300 Planarization APC 304 is illustrated in detail. In the illustratedembodiment, the material process flow continues from the post-etchmeasurement 310 to the deposition of the barrier/seed metal 312. In anembodiment, the barrier metal deposited is TaN, although other materialsare possible and known in the art. After the seed/barrier metal process,the metal plating process 314 is completed. In an embodiment, theplating process 314 is copper plating by an enhanced electrochemicalplating (ECP) process; however other metals and plating processes arepossible and known in the art.

The Supervisor APC 306 passes the process target specific to the wafer,as described above with reference to FIGS. 2 a and 2 c, to thePlanarization APC 304. The Planarization APC 304 determines aplanarization process parameter required to substantially yield theprocess target. The planarization process parameter may include aparameter of the recipe that will be used to perform the planarizationprocess 316, such as, polish time and/or pressure. The planarizationprocess parameter is determined by the Planarization APC 304 using amodel-based controller. In an embodiment, the planarization processparameter is determined by the Planarization APC 304 using amodel-based, run-to-run controller. In an embodiment, the controllerincludes a part-effect model that may take into account the design rulesfor the wafer. The design rules may include the circuit pattern densityand specific requirements for performance of the product beingfabricated. In an embodiment, the controller includes a tool-effectmodel that may take into account process deviations particular to thetool. In an embodiment, the tool-effect model includes a time-factormodel to predict the effect of the age of the pad that is to be used toplanarize the wafer. In an embodiment, the planarization process 316includes a multiple head tool and the tool-effect model includescompensating for head-specific deviations. In an embodiment, thePlanarization APC 304 takes into account end-point detection that may beimbedded in the planarization process 316 at one or more planarizationprocess steps, when determining the process parameter. In an embodiment,feed-forward data is received from the barrier/seed metal depositionprocess 312 that includes the density of the metal, allowing thePlanarization APC 304 to compensate for deviations in the barrier/seedmetal deposition process 312 when determining the planarization processparameter. In an embodiment, the Planarization APC 304 uses theproperties and/or dimensions of an antireflective coating (ARC) layerdeposited on top of the dielectric layer to determine the planarizationprocess parameter. The Planarization APC 304 sends the process parameterto the planarization process 316, for example, to a tool such as the CMPtool 106, described above with reference to FIG. 1.

The Planarization APC 304 periodically updates the models used todetermine the planarization process parameter using feedback data fromthe material process flow including feedback data from the planarizationprocess 316 and the post-planarization measurement 318. The feedbackdata from the planarization process 316 may include process data, suchas, the process parameter and the tool parameters used, including theage of the pad used and a designation of the tool sector, for example, aparticular head of a CMP tool, where the processing occurred. Thefeedback data from the post-planarization measurement 318 may includemeasurements of the planarized metal layer. In an embodiment, themeasurement 310 is performed on a Rudolph Metaplus or other suchmetrology tools as known in the art. In an alternative embodiment, themeasurement is performed by metrology equipment embedded in theplanarization tool, such as, for example, the CMP tool 106, describedabove with reference to FIG. 1. Upon receiving the feedback data, thePlanarization APC 304 determines the difference between the feedbackdata, which illustrates the actual process output, and themodel-predicted process output. The Planarization APC 304 uses thisdifference to update the model for use in determining a planarizationprocess parameter for a subsequent wafer. In an embodiment, an EWMA isused to filter outlier data. The difference between the predicted andactual output may be a result of process drift due to, for example, theaging of the pad, preventive maintenance performed on the tool, and/or avariety of other factors as known in the art. The frequency of modelupdate may be on a wafer-by-wafer basis, lot-by-lot basis, processrun-to-run basis, and/or any other frequency determined by the user. Inan embodiment, the post-planarization measurement 318 data may also befeed-forward data used in a subsequent process.

Referring now to FIG. 4, illustrated is process control method 400 whichis one embodiment of the method of process control method 300, describedabove with reference to FIGS. 3 a, 3 b, 3 c, and 3 d. The processcontrol method 400 provides control for a copper interconnectfabrication process, and in particular controls the copper interconnectRs variation. In the embodiment, the etch process 308, as describedabove with reference to FIGS. 3 a, 3 b, and 3 c, is a trench etch wherea trench is etched in a dielectric layer, and the planarization process316, as described above with reference to FIGS. 3 a, 3 c, and 3 d, is aCMP process. The copper Rs may be highly dependant on the trench etchand CMP processes and the illustrated method 400 may be implemented toreduce the copper Rs variation by controlling at least these twoprocesses and utilizing the Supervisor APC 306, described above withreference to FIGS. 3 a and 3 c, as a Cu-Rs Supervisor with a goal ofminimizing copper Rs variation. The flowchart in FIG. 4 is but oneembodiment of controlling copper Rs through the trench etch and CMPprocesses and other methods are possible; in addition the FIG. 4flowchart may not be inclusive of all process steps.

The method 400 begins at step 402 where a wafer is at the trench etchprocess step awaiting processing by an etch tool, such as the etcher104, described above with reference to FIG. 1. In step 404, the TrenchEtch APC retrieves the chamber conditions from the etcher, design rulesfor the wafer, and the process target (e.g. the desired trenchdimensions). In step 406, the trench etch APC controller determines theetch process parameter of trim time for the wafer through the use of themodels. The Trench Etch APC then checks to ensure that the trim time iswithin the safe range for the process, as set by a user or determined bystatistical process control, in step 408. If the trim time is not withinthe safe range, in step 410 the Trench Etch APC alarms and userinteraction is required. The safe range may reduce the opportunity formisprocessing a wafer using a miscalculated process parameter. If thetrim time is within the safe range, in step 412 the Trench Etch APCassigns the trim time, taking into account the particular effect of thechamber the wafer will be processed in, to the etch process. In step414, the trench is etched in the dielectric of the wafer. Afterprocessing the wafer, in step 416 the Trench Etch APC collects from theetch process the trim time performed and the chamber used for the wafer.After the etch process, step 420 provides an optical measurement of thewafer including the depth of the trench, and the critical dimension(width) of the trench, as well as the thickness of an antireflectivecoating (ARC) located on the dielectric. This measurement data is thencollected by the Trench Etch APC in step 422. In step 424, the TrenchEtch APC uses the measurement data to calculate the error for the modelused to determine the process parameter of trim time. The error in themodel is the difference between the model prediction and the actualoutput of the process, which is found in the feedback data including themeasurement data from step 422 and the process data from step 416. TheTrench Etch APC in step 426 updates the model for use in determining thetrim time for subsequent wafers. The measurement data taken in step 420is also passed to the Cu-Rs Supervisor in step 428 for use indetermining the final target thickness of the copper interconnect layerfor the wafer on which the measurements were taken, as described below.The method 400 continues to step 430; step 430 is illustrative ofadditional processes performed on the wafer including, but not limitedto, barrier metal deposition and copper plating.

The method 400 continues to step 432 where the wafer is ready for the CuCMP process step awaiting processing by a CMP tool, such as the CMP tool106, as described above in reference to FIG. 1. In step 434, Cu-Rs APCdetermines the CMP process target for the wafer which is the optimumthickness for the copper layer post-CMP processing. The copper thicknessis determined using a model of Rs. In an embodiment, the model isexperimentally determined and describes the relationship between thecopper dimensions and Rs. In an embodiment, Rs is a function of theinverse of the area of the copper interconnect (such that an increase inarea will decrease the Rs). A target value for Rs is obtained from userinput and an inverse of the model ran to find the desired area. The areais a function of the critical dimension of the trench, as measured instep 420, and thickness of the copper interconnect layer. Then solvingfor the thickness required to meet the Rs goal, in step 436, the Cu-RsSupervisor APC passes the target copper thickness to the Cu CMP APC.

The Cu CMP APC in step 438 obtains the additional data needed by themodel-based controller to determine the process parameter for the CMPprocess. This data includes the tool condition, design rules for thewafer, and the pad age effect model parameters. The Cu CMP APC, in step440, runs the models to determine the process parameter of polish timefor the Cu CMP process. In step 442, the Cu CMP APC checks the polishtime to ensure that an outlier is not sent to the CMP tool, as suchreducing the opportunity for a misprocessed wafer. In step 442, if thecalculated polish time is outside of a limit, which may be set by a useror statistical process control techniques, the polish time is adjustedto be the limit in step 444. The method 400 continues to step 446 wherethe Cu CMP APC assigns the polish time to the CMP tool for processing.In an embodiment, the Cu CMP APC may assign additional processparameters such as, for example, pressure applied by the CMP tool head.In step 448, the CMP process is performed using the determined polishtime. In the illustrated embodiment, the CMP process includes threeplatens. The platen 1 process, step 450 a, is controlled by endpointdetection. The endpoint detection may allow variations from the platingprocess to be removed. In an embodiment, the platen 2 process, step 450b, is controlled by endpoint detection. In an alternative embodiment,the platen 2 process, step 450 b, is controlled by the Cu CMP APCdetermined process parameter. The platen 3, step 450 c, is controlled bythe Cu CMP APC determined process parameter. After completion of the CMPprocess, in step 452 the Cu CMP APC collects the process data from theCMP process. The process data may include the polish time used, the padlife for the pads used for the process, and a designator of the headused to process the wafer. The wafer is moved to step 454 where theremaining copper thickness is measured and collected by the Cu CMP APCin step 456. The Cu CMP APC uses the feedback data of the copperthickness measurement and the process data gathered in step 452 tocalculate the error in the model that generates the polish time. Theerror in the model is the difference between the model prediction andthe actual output as shown by the feedback data. The Cu CMP APC in step460 updates the model for use with the next wafer. The wafer moves tothe next process step in step 462.

Although only a few exemplary embodiments of this invention have beendescribed in detail above, those skilled in the art will readilyappreciate that many modifications are possible in the exemplaryembodiments without materially departing from the novel teachings andadvantages of this disclosure.

In one embodiment, an advanced process control (APC) method forsemiconductor fabrication is provided. A first substrate and a secondsubstrate are provided. The first substrate and the second substrateinclude a dielectric layer. A first etch process parameter for the firstsubstrate is determined. A trench is etched in the dielectric layer ofthe first substrate using the first etch process parameter. At least oneaspect of the etched trench of the first substrate is measured. Themeasured aspect is used to determine a second etch process parameter forthe second substrate and to determine a planarization process parameterfor the first substrate.

In another embodiment, a method for controlling Rs variation insemiconductor fabrication is provided. A first wafer and a second waferare provided. The first wafer and the second wafer include a dielectriclayer. A first etch process parameter for the first wafer is determined.A trench is etched in the dielectric layer of the first wafer using thefirst etch process parameter. At least one dimension of the etchedtrench of the first wafer is measured. A second etch process parameterfor the second wafer is determined using the measured dimension of theetched trench of the first wafer. A first planarization processparameter for the second wafer is determined using the measureddimension of the etched trench of the first wafer. Metal is deposited onthe first wafer. The first wafer including the deposited metal isplanarized using the determined first planarization process parameter.The thickness of the deposited metal on the first wafer afterplanarizing is measured. A second planarization process parameter forthe second wafer is determined based on the thickness of the depositedmetal on the first wafer after planarizing.

In another embodiment, a computer comprising at least one model-basedrun-to-run controller is provided. The computer is operable to receive afirst dataset regarding a first wafer after a first process. It isfurther operable to determine a process parameter for the first processfor a second wafer using the first dataset. It is yet further operableto determine a second process parameter for a second process for thefirst wafer using the first dataset.

1. A computer comprising a recordable medium on which is storedinstructions for at least one model-based, run-to-run controller routineoperable to: receive a first dataset regarding a first wafer after afirst process; determine a first process parameter for the first processfor a second wafer using the first dataset; and determine a secondprocess parameter for a second process for the first wafer using thefirst dataset.
 2. The computer of claim 1, wherein the first process isan etch process.
 3. The computer of claim 1, wherein the second processis a planarization process.
 4. The computer of claim 1, wherein theinstructions further comprise receiving a second dataset regarding thefirst wafer after the second process; and determining a second processparameter for the second process for the second wafer using the seconddataset.
 5. The computer of claim 1, wherein the determining the secondprocess parameter uses a tool effect model and a part effect model. 6.The computer of claim 1, wherein the first process parameter is trimtime.
 7. The computer of claim 1, wherein the second process parameteris polish time.
 8. A computer comprising a recordable medium on which isstored instructions for at least one model-based, run-to-run controllerroutine operable to: collect a value for a first etch process parameterfor the first substrate, wherein the first process parameter isassociated with etching a trench in a first substrate; collect ameasurement of a trench etched in the first substrate using the firstprocess parameter; determine a second etch process parameter for asecond substrate using the collected measurement of the etched trench ofthe first substrate; and determine a planarization process parameter forthe first substrate using the collected measurement of the etched trenchof the first substrate.
 9. The computer of claim 8, wherein thecontroller controls a damascene copper interconnect fabrication process.10. The computer of claim 8, wherein the first etch process parameterand the second etch process parameter include trim time.
 11. Thecomputer of claim 8, wherein the collected measurement includes at leastone of the trench critical dimension and the trench depth.
 12. Thecomputer of claim 8, further comprising instructions to: collect thefirst etch process parameter; and send the first etch process parameterto an etch tool.
 13. The computer of claim 8, wherein the determiningthe second etch process parameter uses a tool-effect model and apart-effect model.
 14. A system comprising: a measurement apparatus tomeasure at least one dimension of a trench of the first wafer; arun-to-run controller including instructions to: collect the measureddimension from the measurement apparatus; determine a second etchprocess parameter for the second wafer using the measured dimension ofthe trench of the first wafer; determine a first planarization processparameter for the first wafer using the measured dimension of the etchedtrench of the first wafer; and send the first planarization processparameter to a planarization apparatus; and the planarization apparatusto planarize the first wafer using the determined first planarizationprocess parameter.
 15. The system of claim 14, wherein the controllerfurther comprises instructions to: determine a second planarizationprocess parameter for the second wafer based on the thickness of thefirst wafer after the planarizing using the first planarization processparameter.
 16. The system of claim 14, wherein the planarizationapparatus is a chemical mechanical polish tool and the determined firstplanarization parameter includes polish time.
 17. The system of claim14, wherein the run-to-run controller includes a tool-effect model and apart-effect model.
 18. The system of claim 17, wherein the tool-effectmodel includes a model for the age of a polishing pad of a CMP tool. 19.The system of claim 14, further comprising: an etching system, whereinthe etching system etches the second wafer using the second etch processparameter.
 20. The system of claim 19, wherein the etching system etchesa trench.